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Contents on the CD Rom

  • Metalorganic compounds (jargon: metalorganics, metallo-organics) are a class of chemical compounds that contain metals and organic ligands.
  • Precursors are one of the compounds that participates in the chemical reaction that produces another compound.
  • Metal-organic (MO) chemicals or precursors are used in the epitaxial growth of LED semiconductor materials
  • Metal-organic (MO) chemicals or precursors provide the source of metallic elements such as gallium (Ga), indium (In) and aluminum (Al).
  • Development of metal organic precursors made significant contribution to the field of
    semiconductor growth.
  • Metal-organic (MO) chemicals specifically designed for the MOVPE or CBE process,
    have improved gas-phase and surface decomposition, leading to very thin high quality semiconductor films.
  • The tremendous expansion of metal-organic chemical vapor deposition process
    (MOCVD) is accounted for its ability to deposit at low temperature a wide variety of thin film materials keeping advantages of the conventional CVD process. The design and the selection of suitably tailored metal-organic precursors is a fundamental key to develop successfully an MOCVD process.
  • The incorporation efficiency (also called reactor efficiency) of trimethylgallium (TMGa) and trimethylaluminium (TMAl) precursors were calculated and then
    compare the ratio of molar flow rate of TMGa and TMAl and the ratio of growth rate of GaN and AlN epitaxial layer.
  • A novel method for deposition of metal oxide thin films, including Al2O3,
    ZrO2, MnOx, and RuOx were demonstrated where the metal-organic precursors and oxidizing agents are delivered in liquid and supercritical CO2.
  • Precursor films consisting of
    mixtures of titanium (n-butoxide)2(2-ethylhexanote)2 and barium 2-ethylhexanoate were spin coated from methyl isobutyl ketone (MIBK) solutions and used to directly deposit patterned mixed metal oxide dielectric pads using standard lithographic exposure tools and methods.
  • Deposition of crystalline alumina films at lower temperatures has demonstrated marginally higher promise with metal-organic precursor systems. These fall into three main categories: aluminum alkoxides, alkyl compounds, and acetylacetonates.
  • LNO layers were prepared by a wet chemical method from metal-organic precursors on Si and Al2O3 substrates.
General Information
  • About Metal-Organic-Precursor
  • Metal-organic precursors and other LED materials
  • Consultant from America
  • Consultant from UK
  • Consultant from USA
  • Consultant from Assam
  • Consultant from England
  • Consultant from New York


  • Incorporation efficiency of metalorganic precursors
  • Metal Oxide Thin Films Deposited from Metal Organic Precursors
    in Supercritical CO2 Solutions
  • Reactive decomposition of metals in supercritical fluids: Investigation of the solubility and decomposability of metal organic substances
  • Recent Trends in the Selection of Metal-Organic Precursors for MOCVD Process
  • Metal Organic Chemical Vapour Deposition at CNR - ICTIMA in Pauda
  • Surface-Selective Deposition of Palladium and Silver Films from Metal-Organic Precursors: A Novel Metal-Organic Chemical Vapor Deposition Redox
    Transmetalation Process
  • Organometallics Process


  • Use of photosensitive Metal-Organic Precursors to deposit metal-oxides for thin-film capacitor applications.
  • CVD of titanium oxide coatings: Comparative evaluation of thermal and plasma assisted processes.
  • High Purity Metalorganic Precursors for CPV device fabrication.
  • Morphology and High-temperature Stability of an
    Amorphous Alumina Coating Deposited by Metal Organic Chemical Vapor Deposition on
    Various Substrates.
  • MEMS Capacitive Switch Fabrication using Photodefinable Metal Oxide Dielectrics.
  • Overview of Chemical Vapour Deposition


  • Metalorganic Atomic Layer Deposition of TiN Thin Films Using TDMAT and NH3
  • Development of CVD, Metal-Organic Precursors and patterning techniques for high Tc application
  • Electrical properties of ?Pb,La?TiO3 thin films deposited by low pressure metal-organic chemical vapor deposition using solid delivery system
  • LNO bottom electrodes for spintronics on Si and Al2O3 substrates prepared by spin coating technique using metal-organic precursors
Company Profiles
  • Company from Massachusetts
  • Company from Pennsylvania
  • Company from USA
  • Company from  England


  • Trimethylaluminum
  • Metal Organics Precursors Product List
  • Diisopropyltelluride


  • Bis(cyclopentadienyl) Magnesium
  • Carbon Tetrabromide
  • Diethyltelluride
  • Diethylzinc
  • Dimethylzinc
  • Triethylgallium
  • Trimethylaluminum
  • Trimethylantimony
  • Trimethylarsenic
  • Trimethylgallium
  • Trimethylindium


  • Method for preventing metalorganic precursor penetration into porous dielectrics
  • In-situ monitoring and feedback control of metalorganic precursor delivery.
  • Metalorganic decomposition deposition of thin conductive films on integrated circuits using reducing ambient.
  • Method of forming a tantalum-containing layer from a metalorganic precursor.
  • Organometallic precursor compounds


  • Metal-organic chemical vapor deposition and nanoscale characterization of zirconium oxide thin films
  • Issues Associated with the Metalorganic Chemical Vapor Deposition of ScGaN and YGaN Alloys
  • Submicron Structures from Organometallic Precursors
  • A study on the real-time decomposition monitoring of a metal organic precursor for metal organic chemical vapor
    deposition processes
  • Measuring the critical thickness of thin metalorganic precursor films
  • Metalorganic Precursors and exceptional customer support

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